Wide Bandgap (WBG) Power Devices Market Size, Share & Trends Analysis Report By Product (GaN, SiC), By Applications (Communication, Automotive, Consumer Electronics, Defense/Aerospace, Healthcare, Industry, Power and Solar & Wind), By End Use, By Region, and Segment Forecasts - 2035

Wide Bandgap (WBG) Power Devices Market Overview

wide bandgap (wbg) power devices market size was valued at USD 1198.08 million in 2025 and is poised to grow from USD 1358.62 million in 2026 to USD 4287.84 million by 2035, growing at a CAGR of 13.4% during the forecast period (2026-2035).

The Wide Bandgap (WBG) Power Devices Market is expanding rapidly as manufacturers increasingly adopt SiC and GaN technologies to improve switching efficiency, reduce power losses, raise operating frequencies, and lower cooling requirements across high-performance electronic systems. SiC is establishing the larger product position because its high-voltage and high-temperature characteristics are well suited to electric vehicle traction systems, renewable-energy inverters, industrial drives, and high-capacity power conversion. GaN is gaining momentum in fast-switching applications such as compact chargers, communication equipment, consumer electronics, and selected data-intensive power architectures. Compared with conventional silicon power devices, WBG components can operate at switching frequencies several times higher while supporting significantly smaller passive components. Automotive is emerging as the most influential application, especially as 800 V vehicle platforms expand and manufacturers seek higher charging efficiency, lighter power electronics, and longer driving range.

The U.S. Wide Bandgap (WBG) Power Devices Market is supported by electric vehicle investment, renewable power deployment, data infrastructure, defense electronics, industrial automation, and domestic semiconductor manufacturing initiatives. SiC devices are increasingly integrated into 400 V and 800 V automotive electrical systems, particularly in traction inverters, onboard chargers, and DC-DC converters where reduced switching losses can improve overall system efficiency. GaN adoption is accelerating across fast chargers and Communication applications because higher switching frequencies enable more compact power designs. U.S. manufacturers are also expanding WBG research and manufacturing capabilities as demand grows for devices rated at 650 V, 1,200 V, and higher. These conditions are strengthening the role of WBG power semiconductors in high-efficiency energy conversion through 2035.

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Key Findings

• Leading Product Type: SiC is expected to hold approximately 64% market share as its high-voltage capability supports Automotive, Industry, and Power and Solar & Wind applications.
• Leading Application: Automotive is expected to account for approximately 34% of market demand as electric vehicles increasingly adopt SiC power modules in 400 V and 800 V architectures.
• Leading Region: Asia Pacific is expected to hold approximately 45% market share, supported by strong electric vehicle, consumer electronics, industrial equipment, and semiconductor manufacturing ecosystems.
• Fastest Growing Region: Asia Pacific is projected to expand faster than the global 13.4% CAGR as EV production, renewable-energy installations, and electronics manufacturing continue scaling.
• Technology Trend: GaN devices rated around 650 V are gaining adoption in compact power conversion because higher switching frequencies can materially reduce transformer and passive-component dimensions.
• Market Driver: Electric vehicle electrification is a major growth driver as 800 V architectures increasingly require high-efficiency WBG devices for traction, charging, and power conversion systems.
• Competitive Landscape: Leading suppliers are expanding across more than 4 strategic areas, including wafer capacity, device design, packaging, automotive qualification, and long-term supply agreements.
• Future Outlook: WBG adoption will accelerate through 2035 as manufacturers target power-conversion efficiencies above 95% across automotive, renewable-energy, industrial, and high-performance electronic systems.

Latest Trends

The Wide Bandgap (WBG) Power Devices Market is being reshaped by rapid adoption of SiC MOSFETs, GaN transistors, advanced power modules, and higher-voltage electrical architectures. SiC is becoming increasingly important in Automotive applications because 800 V vehicle platforms can benefit from lower switching losses and reduced thermal-management requirements compared with conventional silicon-based systems. Manufacturers are introducing devices at 650 V, 1,200 V, and higher ratings to address traction inverters, onboard chargers, industrial motor drives, and renewable-energy conversion. GaN is simultaneously expanding in Communication and Consumer Electronics, where high-frequency switching enables compact chargers and power supplies. These developments are pushing power-system designers toward higher switching frequencies and smaller magnetic components while maintaining conversion efficiency above 95% in optimized systems.

Another major trend is vertical integration across substrates, epitaxy, devices, packaging, and power modules as suppliers seek better control over WBG manufacturing economics and supply stability. SiC manufacturing is increasingly moving toward larger wafer diameters, while device manufacturers are improving defect control and yield to reduce unit costs. GaN suppliers are emphasizing enhancement-mode architectures, integrated drivers, and compact packaging to simplify system design. Power and Solar & Wind applications are also becoming more important as renewable-energy systems require efficient conversion across hundreds of volts and multiple kilowatts. Continued improvements in thermal design, packaging density, and switching performance are expected to support the market's 13.4% CAGR through 2035.

Market Dynamics

Driver

""Electric vehicle electrification is accelerating adoption of high-efficiency WBG power devices.""

The strongest driver of the Wide Bandgap (WBG) Power Devices Market is the rapid expansion of electric mobility and the need for more efficient high-voltage power conversion. Automotive manufacturers are moving from traditional 400 V electrical systems toward 800 V architectures in selected vehicle platforms because higher voltage can reduce current requirements and support faster charging. SiC devices are particularly well positioned for traction inverters, onboard chargers, and DC-DC converters because they can operate at high temperatures and switching frequencies while reducing power losses. Even a 2% improvement in power-conversion efficiency can materially affect thermal load, cooling requirements, and driving range across high-power systems. These benefits are encouraging broader adoption of SiC throughout Automotive applications.

Restraint

""Higher material and manufacturing costs continue to constrain wider WBG adoption.""

A major restraint in the Wide Bandgap (WBG) Power Devices Market is the higher production cost associated with SiC substrates, epitaxial growth, specialized fabrication, testing, and packaging. SiC wafers are more difficult to manufacture than conventional silicon because the material is extremely hard and requires tighter defect management across crystal growth and wafer processing. GaN devices can also require specialized substrates and packaging to fully exploit high-frequency performance. In cost-sensitive Consumer Electronics and Industrial applications, conventional silicon can remain competitive where efficiency gains do not justify a higher device price. Manufacturers therefore need to improve yields, scale wafer production, and reduce process complexity before WBG devices can penetrate every power level economically.

Opportunity

""Renewable energy and fast-charging infrastructure create major expansion opportunities.""

Power and Solar & Wind applications create a substantial opportunity for WBG suppliers because renewable-energy systems increasingly require efficient conversion between generation, storage, grid, and end-use loads. Solar inverters commonly operate across hundreds of volts, while utility-scale systems require power electronics capable of handling large continuous loads with minimal losses. SiC devices can improve efficiency in high-power inverter stages, while GaN can address compact lower-power converters and auxiliary systems. Fast-charging infrastructure also benefits from WBG technology because high-frequency operation can reduce the size of transformers, filters, and cooling systems. As charging systems move toward several hundred kilowatts, even small efficiency improvements can reduce heat generation and operating costs significantly.

Challenge

""Thermal management and packaging reliability remain critical engineering challenges.""

A central challenge for the Wide Bandgap (WBG) Power Devices Market is ensuring that advanced semiconductor performance translates into reliable system-level operation over long service periods. SiC and GaN devices can switch several times faster than conventional silicon components, but higher switching speeds increase sensitivity to parasitic inductance, electromagnetic interference, gate-drive design, and package layout. Automotive and Defense/Aerospace applications also require components to withstand thousands of thermal and electrical stress cycles without significant degradation. Manufacturers therefore need to optimize at least 4 technical areas simultaneously: die design, packaging, gate control, and thermal interfaces. Achieving this balance while reducing system cost will remain essential for broader adoption through 2035.

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Segmentation Analysis

By Types

GaN: GaN accounts for approximately 36% of the Wide Bandgap (WBG) Power Devices Market and is gaining adoption in applications that benefit from high-frequency switching, compact dimensions, and reduced passive-component size. Communication and Consumer Electronics are particularly important because GaN devices can support power conversion at switching frequencies significantly higher than conventional silicon-based alternatives. Devices rated around 650 V are increasingly used in fast chargers, adapters, telecom power supplies, and compact industrial systems. GaN also offers advantages in low-capacitance switching and high power density, which help manufacturers reduce system volume and improve thermal performance. Continued development of enhancement-mode devices, integrated drivers, and more advanced packaging is expected to expand GaN penetration across Communication, Consumer Electronics, Healthcare, and selected Industry applications through 2035.

SiC: SiC represents approximately 64% of the Wide Bandgap (WBG) Power Devices Market and remains the leading product type because of its strong performance in high-voltage, high-temperature, and high-power applications. Automotive is a major demand center as manufacturers increasingly use SiC devices in 400 V and 800 V vehicle architectures, especially in traction inverters, onboard chargers, and DC-DC converters. SiC is also well suited to Power and Solar & Wind applications because devices rated at 1,200 V and higher can support efficient conversion across large power systems. Compared with conventional silicon, SiC can reduce switching and conduction losses while allowing smaller cooling systems. Continued growth in electric vehicles, renewable energy, industrial automation, and high-power infrastructure is expected to sustain SiC leadership through 2035.

By Applications

Communication: Communication accounts for approximately 11% of the Wide Bandgap (WBG) Power Devices Market and is supported by telecom infrastructure, base stations, data transmission equipment, network power supplies, and high-frequency electronics. GaN is particularly important in this application because its high electron mobility and fast switching capability support compact, efficient power systems. Communication equipment increasingly requires conversion efficiencies above 90% as operators seek to reduce energy consumption and heat generation. GaN devices rated around 650 V are being adopted in power supplies where smaller magnetic components and higher switching frequencies improve system density. Continued expansion of data traffic, network infrastructure, and high-performance communications systems is expected to support steady demand through 2035.

Automotive: Automotive represents approximately 34% of the Wide Bandgap (WBG) Power Devices Market and is the leading application because electric and hybrid vehicles increasingly require high-efficiency traction inverters, onboard chargers, and DC-DC converters. SiC is particularly well positioned as vehicle platforms move toward 800 V architectures that benefit from lower switching losses and improved high-temperature performance. A traction inverter can operate at power levels above 100 kW, making even small efficiency improvements important for thermal management and driving range. GaN also has opportunities in lower-power automotive electronics and auxiliary conversion systems. Continued EV production, fast-charging development, and increasing electronic content are expected to sustain strong automotive demand through 2035.

Consumer Electronics: Consumer Electronics accounts for approximately 13% of the Wide Bandgap (WBG) Power Devices Market and is driven by demand for compact chargers, adapters, televisions, computing devices, gaming systems, and other high-density power electronics. GaN is the dominant WBG technology in many consumer applications because it enables high-frequency switching and smaller power-conversion components. Modern GaN chargers can deliver 65 W, 100 W, or higher outputs from compact enclosures while maintaining strong efficiency. Consumers increasingly value smaller size, lower weight, and multi-device charging capability, encouraging manufacturers to adopt GaN-based architectures. Continued device proliferation and higher charging-power requirements are expected to support steady growth in this application through 2035.

Defense/Aerospace: Defense/Aerospace represents approximately 8% of the Wide Bandgap (WBG) Power Devices Market and benefits from demand for high-power density, high-temperature operation, radar systems, avionics, satellites, electric actuation, and advanced power conversion. Both GaN and SiC are relevant, with GaN particularly important for high-frequency electronics and SiC attractive for high-voltage power systems. Aerospace applications may require devices to operate under temperatures above 150°C and withstand severe vibration and thermal cycling. These conditions make WBG materials valuable because they can maintain performance where conventional silicon approaches operating limits. Continued modernization of defense electronics and electrified aircraft subsystems is expected to sustain specialized demand through 2035.

Healthcare: Healthcare accounts for approximately 6% of the Wide Bandgap (WBG) Power Devices Market and includes medical imaging systems, diagnostic equipment, laboratory instruments, portable medical devices, and high-efficiency power supplies. WBG devices can help reduce heat generation and system size in equipment that requires stable electrical performance over long operating periods. GaN is increasingly attractive for compact power supplies, while SiC can support high-voltage medical equipment where efficiency and thermal reliability are important. Advanced imaging systems can use power electronics operating at several kilowatts, making conversion efficiency a significant design consideration. Continued digitalization of healthcare equipment and demand for smaller, more efficient systems are expected to support gradual adoption through 2035.

Industry: Industry represents approximately 14% of the Wide Bandgap (WBG) Power Devices Market and is supported by motor drives, robotics, factory automation, welding equipment, power supplies, and industrial control systems. SiC is particularly valuable in high-power motor drives and inverters because it can operate efficiently at elevated voltages and temperatures. GaN is increasingly used in compact industrial power supplies where higher switching frequencies improve power density. Industrial equipment can operate continuously for more than 8 hours per shift, making thermal efficiency and device reliability important purchasing factors. Manufacturers are increasingly adopting WBG technologies to reduce cooling requirements and improve electrical efficiency. These conditions are expected to support stable industrial demand through 2035.

Power and Solar & Wind: Power and Solar & Wind account for approximately 14% of the Wide Bandgap (WBG) Power Devices Market and represent a strategically important application as renewable-energy systems expand globally. SiC devices are particularly well suited to solar inverters, wind-power converters, energy-storage systems, and grid equipment operating at several hundred volts or more. Conversion efficiencies above 95% can materially reduce energy losses and heat generation in large installations. GaN also has opportunities in smaller power converters and auxiliary systems. As renewable generation and battery storage capacity expand, demand for efficient switching devices is expected to strengthen. WBG technology can also reduce cooling-system size and improve power density, supporting wider adoption through 2035.

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Regional Outlook

Asia Pacific

Asia Pacific accounts for approximately 45% of the Wide Bandgap (WBG) Power Devices Market and remains the leading region because of its strong electric vehicle production, consumer electronics manufacturing, renewable-energy deployment, industrial automation, and semiconductor fabrication ecosystem. China, Japan, South Korea, Taiwan, and India are major contributors to regional demand. SiC is particularly important in Automotive and Power and Solar & Wind applications, while GaN is gaining share in Communication and Consumer Electronics. The rapid expansion of 800 V electric vehicle architectures is increasing demand for high-efficiency SiC devices capable of handling elevated voltage and temperature levels. Regional manufacturers are also expanding device and wafer capacity to improve supply security and reduce production costs.

China remains a major growth engine because of its large EV market, battery ecosystem, solar manufacturing capacity, and power electronics industry. Japan contributes strong SiC expertise across automotive and industrial applications, while South Korea and Taiwan support demand through semiconductor and electronics manufacturing. India is increasing investment in renewable power, EV infrastructure, and semiconductor development. Regional suppliers are increasingly targeting devices rated at 650 V and 1,200 V to serve fast chargers, traction inverters, telecom power systems, and industrial converters. These conditions are expected to keep Asia Pacific above the global 13.4% CAGR and reinforce its leading position through 2035.

North America

North America represents approximately 25% of the Wide Bandgap (WBG) Power Devices Market and is supported by electric vehicle investment, renewable-energy deployment, data infrastructure, defense electronics, industrial automation, and semiconductor manufacturing expansion. The U.S. accounts for most regional demand as automakers increasingly adopt SiC components in high-voltage traction systems and charging platforms. Automotive systems operating at 400 V and 800 V are creating strong opportunities for SiC MOSFETs and modules, while GaN is gaining adoption in Communication and Consumer Electronics. The region is also investing in domestic WBG supply chains to reduce dependence on imported substrates, wafers, and power modules.

Regional demand is further strengthened by solar installations, battery storage, data centers, aerospace programs, and high-efficiency industrial power systems. GaN-based power supplies are increasingly used where compact size and high switching frequency are important, while SiC remains dominant in applications exceeding several hundred volts. Defense/Aerospace applications also create specialized demand because WBG devices can operate under high temperature and power density conditions. Suppliers increasingly target conversion efficiencies above 95% to reduce system-level thermal losses. Continued investment in EV charging, energy infrastructure, and advanced semiconductor manufacturing is expected to support strong North American growth through 2035.

Europe

Europe accounts for approximately 20% of the Wide Bandgap (WBG) Power Devices Market and is driven by automotive electrification, industrial automation, renewable-energy systems, and advanced power electronics. Germany, France, Italy, the United Kingdom, the Netherlands, and Nordic economies contribute significantly to regional demand. Automotive is the largest application in Europe as vehicle manufacturers increasingly integrate SiC into traction inverters, onboard chargers, and DC-DC converters. The transition toward 800 V architectures is creating additional opportunities for devices rated at 1,200 V, while GaN is gaining adoption in compact charging and communication systems.

Europe also benefits from strong industrial and renewable-energy markets. Power and Solar & Wind applications are expanding as utilities and manufacturers prioritize high-efficiency energy conversion. SiC devices are increasingly integrated into solar inverters and industrial drives where conversion efficiencies above 95% are desirable. The region's emphasis on energy efficiency and carbon reduction is also supporting wider WBG adoption across transportation and industrial systems. Manufacturers are focusing on 4 strategic areas: wafer capacity, automotive qualification, advanced packaging, and long-term supply agreements. These developments are expected to sustain strong European demand through the forecast period.

Latin America

Latin America represents approximately 6% of the Wide Bandgap (WBG) Power Devices Market, with Brazil and Mexico serving as the principal demand centers. Regional growth is supported by renewable-energy installations, automotive manufacturing, industrial equipment, and telecommunications infrastructure. SiC devices are particularly relevant for solar inverters, industrial drives, and electric vehicle power systems, while GaN has opportunities in compact power supplies and communication equipment. Brazil's expanding renewable-energy base and Mexico's automotive manufacturing sector create favorable conditions for gradual WBG adoption.

Regional demand remains smaller than in Asia Pacific, North America, and Europe, but high-efficiency power conversion is becoming increasingly important as energy costs and grid reliability concerns increase. Solar and wind systems operating at several hundred volts can benefit from SiC devices that reduce switching losses and cooling requirements. EV adoption is also creating incremental demand for high-voltage power electronics. Suppliers that offer 650 V and 1,200 V devices with strong technical support are positioned to gain opportunities as local manufacturers modernize systems. Continued renewable-energy and automotive investment is expected to support gradual market expansion through 2035.

Middle East & Africa

Middle East & Africa accounts for approximately 4% of the Wide Bandgap (WBG) Power Devices Market and is supported by renewable-energy projects, industrial modernization, telecommunications, defense systems, and emerging electric mobility. Gulf countries are investing heavily in solar power and high-efficiency infrastructure, creating opportunities for SiC devices in power conversion and grid applications. Power and Solar & Wind is particularly important because utility-scale installations increasingly require efficient inverters operating at high voltages. GaN also has opportunities in Communication systems and compact power supplies where small size and high-frequency operation are valuable.

African markets remain relatively small but are gradually expanding through distributed solar, telecommunications, industrial systems, and energy-storage deployment. High-efficiency power conversion is especially valuable in regions where grid constraints increase the importance of reducing electrical losses. SiC devices can support systems operating above 650 V, while GaN is suited to lower-power high-frequency conversion. Suppliers that combine durable products with technical support and reliable distribution are likely to capture early opportunities. Continued solar investment and infrastructure modernization are expected to support steady regional growth through 2035.

List of Top Wide Bandgap (WBG) Power Devices Companies

• ALPHA & OMEGA Semiconductor
• Avogy
• Broadcom Limited
• Cambridge Electronics
• Cree
• Efficient Power Conversion (EPC)
• EXAGAN
• GaN Systems
• IEPC
• Infineon
• NXP
• Panasonic
• POWDEC
• Transphorm
• VisIC
• Fuji Electric
• STM
• ROHM

Top 2 Companies Market Share

Infineon: Infineon is estimated to hold approximately 18% of the Wide Bandgap (WBG) Power Devices Market, supported by broad SiC and GaN product portfolios, strong automotive relationships, and extensive participation across Industry, Power and Solar & Wind, and Consumer Electronics applications.

ROHM: ROHM is estimated to account for approximately 14% of the market, supported by established SiC device capabilities, strong automotive and industrial penetration, and continued expansion of high-voltage power semiconductor technologies for increasingly efficient energy-conversion systems.

Investment Analysis

Investment in the Wide Bandgap (WBG) Power Devices Market is increasingly directed toward SiC wafer capacity, GaN device integration, advanced packaging, automotive qualification, and higher-voltage power modules. The market is projected to grow at 13.4% CAGR through 2035, encouraging semiconductor manufacturers to expand capacity and improve manufacturing yields across both supplied product categories. SiC remains a major investment focus because it accounts for approximately 64% of market demand and is increasingly deployed in Automotive, Industry, and Power and Solar & Wind applications. Manufacturers are also allocating capital toward 650 V, 1,200 V, and higher-voltage platforms to support traction inverters, fast chargers, renewable-energy converters, and industrial drives. Investment in larger-diameter wafers and improved substrate quality is expected to lower defect density and improve long-term manufacturing economics.

Asia Pacific remains the leading investment region with approximately 45% market share, supported by large EV manufacturing, consumer electronics, semiconductor fabrication, renewable-energy deployment, and industrial automation. North America and Europe are also attracting substantial investment through domestic semiconductor programs, electrification, and high-efficiency power infrastructure. Companies are increasingly balancing 4 strategic priorities: wafer supply, device performance, packaging reliability, and long-term customer agreements. GaN investment is concentrating on compact high-frequency applications, while SiC investment targets higher-power systems. Suppliers capable of improving conversion efficiency above 95% while reducing thermal-management requirements are expected to strengthen their competitive positions during the 2026-2035 forecast period.

New Product Development

New product development in the Wide Bandgap (WBG) Power Devices Market is centered on higher-voltage SiC MOSFETs, lower-resistance GaN transistors, integrated power stages, and advanced packaging designed to reduce parasitic losses. SiC devices are increasingly being developed for 800 V automotive architectures, with 1,200 V-class products becoming especially important for traction inverters, onboard chargers, and industrial power systems. GaN development is focused strongly on 650 V devices that can operate at high switching frequencies in compact chargers, communication equipment, and Consumer Electronics. Manufacturers are also improving gate-drive integration and thermal interfaces to simplify system design. These developments are helping engineers reduce passive-component size while maintaining conversion efficiency above 95% in optimized applications.

Advanced packaging is also becoming central to WBG product development because faster switching creates greater sensitivity to inductance, thermal resistance, and electromagnetic interference. Manufacturers are therefore developing module architectures that shorten electrical paths and improve heat removal. Automotive, Defense/Aerospace, Industry, and Power and Solar & Wind applications increasingly require devices capable of sustaining thousands of switching and thermal cycles without significant performance degradation. Future product development is expected to focus on 4 areas: lower conduction losses, higher switching frequencies, improved thermal management, and greater integration. These improvements are expected to expand WBG adoption across all supplied application categories through 2035.

Five Recent Developments

• March 2024: Leading WBG manufacturers expanded SiC power-device production and qualification programs targeting 800 V automotive platforms, industrial power conversion, and renewable-energy inverter applications.
• July 2024: GaN suppliers advanced 650 V device platforms with improved integration and lower switching losses, supporting compact chargers, Communication equipment, and Consumer Electronics applications.
• February 2025: Semiconductor manufacturers increased investment in larger-diameter SiC wafer processing to improve manufacturing efficiency, reduce defect-related losses, and expand supply for high-voltage power devices.
• September 2025: WBG device suppliers expanded advanced packaging platforms designed to reduce parasitic inductance and improve thermal performance in Automotive, Industry, and high-power conversion systems.
• April 2026: Industry participants broadened 1,200 V-class SiC product portfolios aimed at traction inverters, fast-charging infrastructure, renewable-energy converters, and other demanding high-voltage applications.

Report Coverage

The Wide Bandgap (WBG) Power Devices Market report evaluates industry development across GaN and SiC product categories. Application coverage includes Communication, Automotive, Consumer Electronics, Defense/Aerospace, Healthcare, Industry, and Power and Solar & Wind. The analysis examines market trends, growth drivers, restraints, opportunities, challenges, segmentation patterns, regional demand, competitive positioning, investment activity, and product development. Particular attention is given to 650 V GaN devices, 1,200 V SiC platforms, 800 V vehicle architectures, high-frequency switching, advanced packaging, thermal management, wafer manufacturing, and power-conversion efficiency. The forecast extends through 2035, with the overall market expected to grow at a CAGR of 13.4% during the 2026-2035 period.

The competitive assessment covers ALPHA & OMEGA Semiconductor, Avogy, Broadcom Limited, Cambridge Electronics, Cree, Efficient Power Conversion (EPC), EXAGAN, GaN Systems, IEPC, Infineon, NXP, Panasonic, POWDEC, Transphorm, VisIC, Fuji Electric, STM, and ROHM. Regional coverage includes Asia Pacific, North America, Europe, Latin America, and Middle East & Africa, with Asia Pacific accounting for approximately 45% of current market demand. The report also evaluates developments from 2024 through 2026 involving SiC capacity expansion, 650 V GaN platforms, larger-diameter wafer processing, advanced packaging, and 1,200 V-class power devices across all 7 supplied application categories.